Product Description
ME 545 Energy Band Gap by Four Probe MethodObjective : Energy band gap of semiconductor Material (Ge Crystal ) By four probe method. Technical Specification : Power supply unit is housed in metal cabinet and comprises of constant current generator 0-20mA, Oven power supply & built in Digital Voltmeter of 0-200mV/ 2VDCProbes Arrangement : It has four individually spring loaded, coated with Zn at the tips. The probes are collinear and equally spaced. The whole arrangement is mounted on a suitable stand and leads areprovided for current and voltage measurements.Sample: Ge (Germanium) crystal in the form of a chip slice.Oven: Maximum Temp. : 200CStandard Accessories : Power chord, Patch chords & Instruction manual.Crystal(Germanium)Oven with cableFour probeThermometer 200C
FAQs of Energy Band Gap by Four Probe Method:
Q: What is the primary usage of the Energy Band Gap by Four Probe Method?
A: The primary usage is to determine the energy band gap of semiconductor materials, specifically Ge Crystal, using the four probe method.
Q: What type of product is the Energy Band Gap by Four Probe Method?
A: It is an educational training kit designed for testing purposes.
Q: What material is used in the construction of this product?
A: The product is made of mild steel.
Q: What is the color of the Energy Band Gap by Four Probe Method device?
A: The device comes in black and white color.
Q: Is this product suitable for testing semiconductor materials?
A: Yes, it is specifically designed for testing the energy band gap of semiconductor materials.